- Ericsson, Saab, SweGaN and Chalmers team up on GaN-on-SiC RF chips
- Project targets efficient high-capacity amplifiers for cmWave 6G bands
What happened: Swedish consortium advances 6G-ready power amplifier technology
Ericsson has formed a research and development alliance with Saab, SweGaN and Chalmers University to explore advanced radio-frequency (RF) power amplifier architectures for future 6G networks. The collaboration is funded by Sweden’s national innovation agency, Vinnova. The group will investigate the properties of gallium nitride on silicon carbide (GaN-on-SiC), using SweGaN’s proprietary QuanFINE architecture. These materials offer wide bandgap capabilities high voltage handling and effective heat dissipation—ideal for high-frequence, energy-efficient amplifiers. The research will focus on centimetric wave (7–15 GHz) spectrum, critical for 6G deployments. The work comprises two parallel strands: one academic—modeling efficiency and design limits—and one industrial—designing and fabricating prototypes for validation. Final outcomes are expected by August 2027, just ahead of ITU evaluation of IMT-2030 technologies and the World Radiocomm Conference that year.
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Why it’s important
This initiative combines telecom, defence and academic expertise in pursuit of more efficient and powerful amplifier technologies vital for 6G. GaN-on-SiC could enable base stations to handle intense compute loads while minimising energy use and thermal risk. Early prototypes may define circuit designs needed for low-distortion, high-density networks. The partnership also underscores Sweden’s capacity for cross-sector collaboration in cutting-edge infrastructure. By 2027, the project aims to contribute foundational hardware solutions for emerging 6G standards. If successful, these breakthroughs could shape how vendors and operators design next-generation network architecture globally.
