- SK hynix accelerates 3D DRAM development timeline
- Company starts simulation and wafer-level testing
What happened: SK hynix launches full-scale work on next-gen DRAM
SK hynix has started development on its 3D DRAM technology. The company confirmed the goal is to begin mass production by 2026. It has now started circuit simulation and wafer-level verification. The firm also revealed work on a new transistor model. This model can stack more than 190 layers vertically. SK hynix shared its progress at the 2025 VLSI Symposium in Hawaii. It described plans to use new materials to improve connection strength. The research aims to address limits in current DRAM scaling.
SK hynix leads the field in DRAM technology. It was the first company to develop HBM3E chips and 1bnm-class DDR5. It now hopes to secure a lead in 3D DRAM, which could power future AI and high-performance computing. With 3D DRAM, more cells can fit in a smaller space. This boosts speed and reduces power use. The new model also targets better reliability and cost-efficiency.
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Why it’s important
3D DRAM can change the memory industry. It moves beyond current scaling methods. SK hynix wants to lead this shift. Its research may influence industry design trends.
High-density memory helps AI, data centres and next-gen devices. Many firms need compact and fast memory to support growing data loads. 3D DRAM can solve current bottlenecks.
This work shows SK hynix’s long-term strategy. It wants to create memory that handles higher bandwidth and lower power. The use of vertical stacking shows new thinking. The project could also raise South Korea’s edge in semiconductor innovation.
